The rising adoption of LEDs is leading to rising demand for GaN epitaxial wafers

An epitaxial wafer (also called epi wafer,epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. The epi layer may be the same material as the substrate, typically monocrystalline silicon, or it may be a more exotic material with specific desirable qualities. Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal-organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE).

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Key players in the global GaN epitaxial wafers market are RF Globalnet, Aixtron, EpiGaN nv, Sciocs, Semiconductor Wafer Inc. IGSS GaN, SweGaN, NTT Advanced Technology Corporation, Infineon Technologies AG, Mitsubishi Electric Corporation, Toshiba Infrastructure Systems & Solutions Corporation, Koninklijke Philips N.V., and ALLOS Semiconductors GmbH among others.

https://www.globalbankingandfinance.com/pdf-gan-epitaxial-wafers-market-will-become-more-sustainable-industry-in-future/